LPDDR4X DRAMs (Low-Power Double Data Rate) feature built-in ECC error correction to ensure high data integrity and system stability by correcting single-bit errors directly within the DRAM IC. With an I/O voltage of 0.6 V, they are significantly more energy-efficient than LPDDR4, making them ideal for mobile and industrial applications. They operate within a temperature range of -40 °C to +105 °C.
Performance and Specifications
The modules reach speeds of up to 2133 MHz (4266 Mbps) and offer capacities of up to 8 GB. The FBGA-200 package enables compact designs. LPDDR4X is compatible with leading platforms and is well-suited for industrial systems, embedded devices, and power-efficient applications where high performance and reliability are required.
